Microwave Plasma Assisted Chemical Vapor Deposition of Diamond
نویسندگان
چکیده
Diamond crystal S and p01 ycrystal l i ne diamond fi lms have been depos i e y t h e microwave plasma ass i s t ed C V D method from C H / H mixtures. The i n: :oncentration of methane, the pressure, the temperatu$e, 'the to ta l flow ra t e and the microwave power were varied in large ranges. The morphology of the deposits were s tudied by op t i ca l and scanning e l ec t ron microscopy and t h e structure by X-Ray diffraction and Raman spectroscopy. The morphologies ranging from microcrystalline spheruli t ic deposits to well-faceted ones w i t h different habits a re r e l a t e d t o t h e degree of s t r u c t u r a l order, t he whole being c l e a r l y function of the experimental deposition conditions. A discussion of the global deposition process i s based on the examination of two successive steps, the nucleation and the growth. I t i s proposed that the important parameter which controls these two steps i s the ra t io between the concent ra t ions of t h e hydrocarbon n e u t r a l s and t h e hydrogen atoms a t t h e gas-sol id interface. Together w i t h t h e s u b s t r a t e temperature, t he va r i a t ions of t h e s e concentrations a1 low to represent the influence of a l l the experimental deposition condit ions. Then t h e s e i n t e r f a c i a l parameters a r e co r re l a t ed wi th t h e degree of structural order and the s t ab i l i t y of the different type of morphology of the deposits. As different combinations of the experimental parameters can lead to the same interfacial deposition conditions, t h i s permits to explain some apparent discrepancies between the resul ts of previous pub1 ished studies and t o deduce some general important characterist ics fo r diamond deposition.
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تاریخ انتشار 2017